دیتاشیت CSD18504Q5A
مشخصات دیتاشیت
نام دیتاشیت | CSD18504Q5A Datasheet |
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حجم فایل | 451.467 کیلوبایت |
نوع فایل | |
تعداد صفحات | 13 |
دانلود دیتاشیت CSD18504Q5A Datasheet |
CSD18504Q5A Datasheet Datasheet |
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مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Texas Instruments CSD18504Q5A
- Power Dissipation (Pd): 3.1W
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 15A
- Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 6.6mΩ@10V,17A
- Package: DFN-8(5x6)
- Manufacturer: Texas Instruments
- Power Dissipation (Max): 3.1W (Ta), 77W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds: 1656pF @ 20V
- Vgs (Max): ±20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Supplier Device Package: 8-VSONP (5x6)
- Packaging: Cut Tape (CT)
- Mounting Type: Surface Mount
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Base Part Number: CSD1850
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- FET Feature: -
- Package / Case: 8-PowerTDFN
- Part Status: Active
- Series: NexFET™
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Rds On (Max) @ Id, Vgs: 6.6mOhm @ 17A, 10V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
- Drain to Source Voltage (Vdss): 40V